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& ! '( '! ) ' " ' ! ( ( (!( 12 3 s d g APM2509N handling code tem p. range package code package code u : to -252 operating junction temp. range c : -55 to 150 c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device APM2509N u : APM2509N xxxxx - date code xxxxx lead free code

(t a = 25 c unless otherwise noted) ? 25v/60a , r ds(on) =8m ?( typ. ) @ v gs =10v r ds(on) =11m ? (typ.) @ v gs =4.5v ? ? ? ? ? super high dense advanced cell design for extremely low r ds(on) ? ? ? ? ? reliable and rugged ? ? ? ? ? to-252 package symbol parameter rating unit v dss drain-source voltage 25 v gss gate-source voltage 20 v i d * maximum drain current ? continuous 60 i dm maximum drain current ? pulsed 110 a * surface mounted on fr4 board, t 10 sec. ? power management in desktop computer or dc/dc converters. g s d n-channel mosfet !
top view of to-252
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# notes a : pulse test ; pulse width 300 s, duty cycle 2 % b : guaranteed by design, not subject to production testing APM2509N symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 25 v i dss zero gate voltage drain current v ds =20v , v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1 1.5 2 v i gss gate leakage current v gs = 20v, v ds =0v 100 na v gs =10v, i ds =35a 8 9 r ds(on) a drain-source on-state resistance v gs =4.5v, i ds =20a 11 15 m ? v sd a diode forward voltage i s =35a, v gs =0v 0.85 1.3 v dynamic b q g total gate charge 20.2 28 q gs gate-source charge 4.8 q gd gate-drain charge v ds =15v, i ds =30a v gs =4.5v, 8.4 nc t d(on) turn-on delay time 10 15 t r turn-on rise time 7 13 t d(off) turn-off delay time 35 50 t f turn-off fall time v dd =15v, i ds =1a, v gen =10v, r g = 6 ? 10 20 ns c iss input capacitance 1785 c oss output capacitance 605 c rss reverse transfer capacitance v gs =0v v ds =15v frequency =1.0mhz 490 pf symbol parameter rating unit t c =25 c 50 p d maximum power dissipation t c =100 c 20 w t j ,t stg maximum operating and storage junction temperature -55 to 150 c r ja * thermal resistance ? junction to ambient 50 c/w r jc thermal resistance ? junction to case 2.5 c/w "#$% (t a = 25 c unless otherwise noted) &
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(t a = 25 c unless otherwise noted)
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* -50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8 i ds =250 a () #'

output characteristics v ds -drain-to-source voltage (v) i d -drain current (a) transfer characteristics v gs -gate-to-source voltage (v) i d -drain current (a) threshold voltage vs. junction temperature t j -junction temperature ( c) on-resistance vs. drain current i d -drain current (a) r ds(on) -on-resistance ( ? ) v gs(th)- threshold voltage (v) (normalized) 012345 0 20 40 60 80 100 t j =125 o c t j =25 o c t j =-55 o c 0246810 0 20 40 60 80 100 3.5v 3v 2v 2.5v v gs =4,5,6,7,8,9,10v 0 20406080100 0.000 0.004 0.008 0.012 0.016 0.020 v gs =10v v gs =4.5v
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0 8 16 24 32 40 0 2 4 6 8 10 v ds =15 v i ds = 30a -50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10 v gs = 10v i ds = 35a () #'

"#$% on-resistance vs. gate-to-source voltage on-resistaence vs. junction temperature r ds(on) -on resistance ( ? ) (normalized) r ds (on) -on-resistance ( ? ) t j -junction temperature ( c) gate charge v gs -gate-to-source voltage 0246810 0.000 0.005 0.010 0.015 0.020 0.025 i d = 35a q g - gate charge (nc) v gs -gate-to-source voltage (v) v ds -drain-to-source voltage (v) capacitance capacitance (pf) 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 frequency=1mhz crss coss ciss
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+ 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 d=0.02 d=0.05 d=0.1 d=0.2 duty cycle=0.5 single pulse 1.duty cycle, d= t1/t2 2.per unit base=r thja =50 o c/w 3.t jm -t a =p dm z thja 4.surface mounted 0.0 0.3 0.6 0.9 1.2 1.5 1.8 1 10 100 t j =150 o c t j =25 o c () #'

"#$% source-drain diode forward voltage i s -source current (a) v sd -source to drain voltage (v) normalized thermal transient impedence, junction to ambient normalized effective transient thermal impedance square wave pulse uration (sec) 1e-4 1e-3 0.01 0.1 1 10 30 0 50 100 150 200 250 single pulse power power (w) time (sec) p dm t 1 t 2
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to-252( reference jedec registration to-252) millimeters inches dim min. max. min. max. a 2.18 2.39 0.086 0.094 a1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.334 6.22 0.210 0.245 e 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 h 9.398 10.41 0.370 0.410 l 0.51 0.020 l1 0.64 1.02 0.025 0.040 l2 0.89 2.032 0.035 0.080 l2 d l1 b b2 e c1 a h l c a1 e1
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- terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p *# (ir/convection or vpr reflow) # *
') + sn-pb eutectic assembly pb-free assembly profile feature large body small body large body small body average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature mix (tsmax) time (min to max)(ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds tsmax to t l - ramp-up rate 3 c/second max tsmax to t l temperature(t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(tp) 225 +0/-5 c 240 +0/-5 c 245 +0/-5 c 250 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface.
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. a j b t2 t1 c t ao e w po p ko bo d1 d f p1 #

(, ! test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles )

application a b c j t1 t2 w p e 330 3 100 2 13 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 (mm)
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/ application carrier width cover tape width devices per reel to- 252 16 13.3 2500 #-
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- anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369

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